A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z,
| A, | |
| ai | Activity |
| B, | |
| bcc | Body centered cubic |
| kB | Boltzmanns constant |
| BMD | Bulk micro defect |
| K | Bulk modulus |
| b | Burgers vector |
| C, | |
| µ | Chemcal potential |
| µ | Chemical potential |
| μ | Chemical potential |
| CSL | Coincidence site lattice |
| τcrit | Critical shear stress |
| COP | Crystal originated particles or pits |
| D, | |
| DLTS | Deep level transisnt spectroscopy |
| D | Diffusion coefficient |
| DSC | Displacement shift complete |
| DRAM | Dynamic random access memory |
| E, | |
| EBIC | Electron beam induced current |
| EBIC | Electron beam induced current |
| ESR | Electron spin resonance |
| EF | Energy of formation |
| H | Enthalpy |
| HF | Enthalpy of Formation |
| S | Entropy |
| SF | Entropy of formation |
| ξ | Extinction length |
| F, | |
| (fcc) | Face centered cubic |
| fcc | Face centered cubic |
| j | Flux of particles |
| F | Force on a dislocation |
| F | Free energy |
| G(p, T, N) | Free enthalpy |
| G | Free enthalpy (= Gibbs energy) |
| GF | Free enthalpy of formation |
| f | Fugacity |
| G, | |
| R | Gas constant |
| g | Geometry factor |
| g | Geometry factor of the lattice for diffusion |
| GF | Gibbs energy or free enthalpy |
| H, | |
| hcp | hexagonal close packed |
| HRTEM | High resolution TEM |
| HRTEM | High-resolution TEM |
| HTML | Hypertext mark up language |
| I, | |
| i.e. | id est (that means) |
| IR | Infra red |
| IC | Integrated circuit |
| IC | Intergrated circuits |
| i | Interstitial |
| J, | |
| ν | Jump frequency |
| K,L, | |
| LBIC | Light beam induced current |
| LPD | Light point defects |
| t(x,y,z) | Line vector |
| M, | |
| MOS | Metal-oxide-semiconductor |
| MBE | Molecular beam epitaxy |
| N, | |
| NMR | Nuclear magnetic resonance |
| O, | |
| OSF | Oxidation induced stacking faults |
| OSF | Oxidation induced stacking fault |
| P, | |
| pi | Partial pressure of component i |
| ppb | Parts per billion |
| PD | Point defect |
| n | Poisson´s ratio |
| Q, | |
| q.e.d | Quod era demonstrantum (what was to be proven) |
| R, | |
| K | Reaction constant |
| RBS | Rutherford backscattering |
| S, | |
| SEM | Scanning electron microscope |
| STM | Scanning tunneling microscope |
| SIMS | Secondary mass spectroccopy |
| G | Shear modulus |
| t | Shear stress in a glide plane |
| F | Short for formation |
| SAGB | Small-angle grain boundary |
| SF | Stacking Fault |
| ε | Strain |
| T, | |
| TEM | Transmission electron microscope |
| TEM | Transmission electron microscopy |
| TEM | Transmission electron microscope |
| U, | |
| UHV | Ultra high vacuum |
| Σ | Unit cell volume of CSL |
| V, | |
| V | Vacancy |
© H. Föll