Self-Diffusion and some Related Quantities in Si

D₀ and Activation Energy E_SD for Self-Diffusion and for Various Impurities Including Intrinsic Point Defects in Si (fitted to D = D⁰ exp (–E_SD/k_BT))

	The following table, which does not even come close to contain all relevant data, nicely illustrates how difficult it is to obtain reliable data for the point defect parameters. The situation has not yet (1999) changed, the values for formation and migration energies reported in the literature still vary from year to year.
		Diffusing Element Measured Quantity (Type of Diffusion Mechanism) Do [10–14 m2 s–1] ESD [eV] Reference Si DTracer 1800 4.77 Peart, 1966 1200 4.72 Ghostagore, 1966 9000 5.13 Fairfield und Masters, 1967 1460 5.02 Mayer et al., 1977 8 4.1 Hirvonen und Antilla, 1974 154 4.65 Kalinowski und Seguin, 1980 20 4.4 Demond et al.; 1983   Si DICIeq 914 4.84 Stolwijk et al.; 1984 320 4.80 Stolwijk et al.; 1988 2000 4.94 Hauber et al., 1989 1400 5.01 Mantovani et al., 1986   Si DVCVeq 0.57 4.03 Tan und Gösele, 1985 10–5 0.4 Tan und Gösele, 1985   I DI 3.75 10–9 0.13 Bronner und Plummer, 1985 8.6 10–5 4.0 Taniguchi et al.; 1983 2,42 10–5 0,937 Falster et al.98   V DV 0.1 2.0 Tan und Gösele, 1985 1,3 10–7 0,457 Falster et al.98 Ge DS 2500 4.97 Hettich et al.; 1979 Sn DS 32 4.25 Teh et al., 1968 CS DS 1.9 3.1 Newman and Wakefield, 1961 Ci Di 4.4 0.88 Tipping and Newman, 1987 O Di 0.07 2.44 Mikkelsen, 1986

To index

3.2.2 Self-Diffusion

Exercise 4.2-1 Diffusion During Cooling

© H. Föll